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SiR436DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a
Q g (Typ.)
FEATURES
? Halogen-free
? TrenchFET ? Power MOSFET
25
0.0046 at V GS = 10 V
0.0062 at V GS = 4.5 V
40
40
13 nC
? 100 % R g Tested
? 100 % UIS Tested
PowerPAK SO-8
APPLICATIONS
? Low-Side Switch
? Server, VRM
6.15 mm
1
S
S
5.15 mm
D
2
3
S
G
4
D
8
7
D
D
G
6
5
D
Bottom View
Ordering Information: SiR436DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
25
± 20
40 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C
I D
I DM
I AS
E AS
I S
40 a
25 b, c
20 b, c
80
40
80
40 a
4.1 b, c
A
mJ
A
T C = 25 °C
50
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
32
5 b, c
W
T A = 70 °C
3.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
20
2.0
25
2.5
°C/W
Notes:
a. Based on T C = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 69011
S-82666-Rev. A, 03-Nov-08
www.vishay.com
1
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